A scanning electron microscope cross section of aluminum gallium nitride-gallium nitride [AlGaN-GaN] atomically attached to a chemical vapor deposition [CVD]-created diamond substrate. [Note: “FET” denotes “field-effect transistor,” and “Epi” stands for
A scanning electron microscope cross section of aluminum gallium nitride-gallium nitride [AlGaN-GaN] atomically attached to a chemical vapor deposition [CVD]-created diamond substrate. [Note: “FET” denotes “field-effect transistor,” and “Epi” stands for “epitaxy” (the growth of a crystal layer on a single crystal of another substance).]